Samsung has revealed its first 512GB DDR5 memory module based on the new High-K Metal Gate (HKMG) process.
Samsung
is pushing ahead with the next generation of memory modules. Its latest stick
of RAM is a 512GB DDR5 module running at 7,200Mbps, which is good enough speed
to process two 30GB ultra-high definition movies in one second - with the new
HKMG solution helping to reduce power leakage.
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Each
chip uses eight layers of 16Gb DRAM chips for a capacity of 128Gb, or 16GB. As
such, Samsung would need 32 of those to make a 512GB RAM module. With 7,200
Mbps speeds, Samsung's latest module would deliver around 57.6 GB/s transfer
speeds on a single channel.
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"By bringing this type of process innovation to DRAM manufacturing, we are able to offer our customers high-performance, yet energy-efficient memory solutions to power the computers needed for medical research, financial markets, autonomous driving, smart cities and beyond." said Young-Soo Sohn, Vice President of the DRAM Memory Planning/ Enabling Group at Samsung Electronics.
"As the amount of data to be moved, stored and processed increases exponentially, the transition to DDR5 comes at a critical inflection point for cloud data centres, networks and edge deployments," said Carolyn Duran, Intel vice president of memory and IO technology said.
Earlier, Samsung first used HKMG tech in 2018 with GDDR6 chips used in GPUs, which was developed by Intel. HKMG replaces the insulator layer in DRAM structures. The high dielectric material contained in the layer reduces current leakage and therefore allows higher performance. Samsung managed to reduce power usage in the new module by 13%.
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